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| D4SB20...... D4SB80 200---800V 4.0 A Features .134(3.4) .122(3.1) .189(4.8) .173(4.4) .150(3.8) .134(3.4) .382(9.7) .366(9.3) Single-phase Silicon Bridge Rectifier Reverse Voltage 200 to 800 V Forward Current 4.0A * Low reverse leakage * High forward surge capability *170 A Surge overload rating:170 Amperes peak .602(15.3) .578(14.7) .157 (4.0) .134(8.4) .122(3.1) .995(25.3) .983(24.7) .057(1.45) .041(1.05) .083(2.1) .069(1.7) .043(1.1) .035(0.9) + ~ ~ .708(18.0) .669(17.0) Mechanical Data .114(2.8) .098(2.5) *: Case: Molded Plastic *: Polarity: Symbols molded or marked on body *: *: 4.6 Mounting Position: Any Weight:4.6 Grams .074(1.9) .059(1.5) .146(3.7) .130(3.3) .031(0.8) .023(0.6) .303(7.7) .303(7.7) .303(7.7) .287(7.3) .287(7.3) .287(7.3) Unitinchmm TA = 25 Maximum Ratings & Thermal Characteristics Symbols Maximum repetitive peak reverse voltage Maximum RMS voltage Maximum DC blocking voltage TC =108 Maximum average forward rectified current Ta=25 Ratings at 25 ambient temperature unless otherwise specified. D4SB20 200 140 200 D4SB40 400 280 400 4.0 2.3 150 30 6 D4SB60 600 420 600 D4SB80 800 560 800 Unit V V V A A A /W VRRM VRMS VDC IF(AV) IF(AV) IFSM IR(AV) RJA Tj, TSTG 8.3ms Peak forward surge current 8.3 ms single half sine-wave @TA = 75 Maximum peak reverse current full cycle Typical thermal resistance Operating junction and storage temperature range -50 --- +150 TA = 25 Electrical Characteristics Ratings at 25 ambient temperature unless otherwise specified. Symbols Maximum forward voltage D4SB20 D4SB40 0.95 10 D4SB60 D4SB80 Unit V A IF = 2.0A TA= 25 VF Maximum reverse current VR = 4.0V, f = 1MHz Type junction capacitance IR Cj 40 pF Web: www.ps-pfs.com http://ps-pfs.en.alibaba.com/ D4SB20...... D4SB80 Characteristic Curves TYPICAL FORWARD CHARACTERISTIC 10 4.0 FORWARD CURRENT DERATING CURVE on glass-epoxi substrate Tl=150 IF(AV) (A) IF(A) Average Forward Rectified Current (A) IF Instantaneous Forward Current (A) + ~ ~ - 3.0 P.C.B. soldering land 5mm sine wave R-load free in air IF(A) 1 2.0 Tl=25 1.0 0.1 0 0.2 0.4 0.6 Pulse measurement per diode 00 40 80 120 160 0.8 1 1.2 VF(V) VF Instantaneous Forward Voltage (V) MAXIMUM NON REPETITIVE PEAK FORWARD SURGE CURRENT IFSM Ta(C) Tamb, ambient temperature (C) 200 14 12 FORWARD POWER DISSIPATION 10mS 10mS 1 Cycle FORWARD POWER DISSIPATION PF(W)) IFSM Peak Forward Surge Current (A) non-repetitive Tj=25 before 10 8 6 4 2 0 IFSM(A) 100 P(W) Sine wave Tj=150 0 1 2 3 4 5 6 7 0 0 2 5 10 20 50 100 Number of Cycles at 60 Hz. I0[A] AVERAGE RECGIFIED FORWARD CURRENT Io(A) FORWARD CURRENT DERATING CURVE 6.0 Tc-sensing point IF(AV) (A) IF(A) Average Forward Rectified Current (A) + ~ ~ - 4.5 Tc sine wave R-load with heatsink 3.0 1.5 00 40 80 120 160 TC(C) Case Temperature Tc() Web: www.ps-pfs.com http://ps-pfs.en.alibaba.com/ |
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